BSS138PS NXP Semiconductors, BSS138PS Datasheet
BSS138PS
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BSS138PS Summary of contents
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... BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...
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... amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code NZ* Min - ...
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... T amb junction temperature ambient temperature storage temperature 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Min = 25 °C [ °C [ °C [2] - −55 − ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET 10 V (V) DS Min Typ [1] - ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138PS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 017aaa034 (s) p 017aaa035 (s) p © ...
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... R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Min = 10 μ 250 μ 0 ...
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... V 2.0 V 3.0 4.0 V (V) DS Fig 7. 017aaa114 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET − (A) −4 10 (1) (2) −5 10 −6 10 0.0 0.5 1 ° amb DS (1) minimum values ...
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... Fig 11. Per transistor: Normalized drain-source 017aaa117 C (pF) 120 180 T (°C) amb (1) C (2) C (3) C Fig 13. Per transistor: Input, output and reverse All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET 2.4 1.8 1.2 0.6 0.0 − 120 R DSon a = ...
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... Q (nC °C amb Fig 15. Per transistor: Gate charge waveform 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... BSS138PS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET 0.4 (2×) 0.6 (2×) Dimensions in mm 1.5 0.3 2.5 1.5 solder lands solder resist solder paste occupied area sot363_fr solder lands solder resist occupied area ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138PS v.1 20101102 BSS138PS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS © NXP B.V. 2010. All rights reserved ...
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... V, 320 mA dual N-channel Trench MOSFET 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 BSS138PS © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS138PS All rights reserved. Date of release: 2 November 2010 Document identifier: BSS138PS ...