PMV213SN NXP Semiconductors, PMV213SN Datasheet
PMV213SN
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PMV213SN Summary of contents
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... Rev. 02 — 19 February 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23. 1.2 Features Low on-state resistance in a small surface mount package. 1.3 Applications DC-to-DC primary side switching. 1.4 Quick reference data V ...
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... 100 Figure pulsed Figure Figure pulsed Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET Min Max Unit - 100 V - 100 ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature 10V Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET 03aa25 50 100 150 200 ------------------- 100 03aj44 100 s ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 11128 Product data TrenchMOS™ standard level FET Conditions Figure Rev. 02 — 19 February 2003 PMV213SN Min Typ Max Unit - - 60 K/W 03aj43 ...
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... MHz; Figure 1 Figure 1 /dt = 100 Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET Min Typ Max Unit 100 - - 1 ...
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... - ( ----------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET 03aj47 V DS > DSon 150 ( DSon 03aa29 ...
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... C j Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET 03aa35 min typ max (V) 03aj49 C iss C oss C rss 10 2 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET 03aj50 (nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 02 — 19 February 2003 PMV213SN TrenchMOS™ standard level FET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... R tot modified due to improved tot S SM SOA graph modified due to improved R R improved. th(j-sp) to reflect the improvement in R Rev. 02 — 19 February 2003 PMV213SN . th(j-sp) © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Trademarks TrenchMOS — Rev. 02 — 19 February 2003 Rev. 02 — 19 February 2003 PMV213SN PMV213SN TrenchMOS™ standard level FET TrenchMOS™ standard level FET is a trademark of Koninklijke Philips Electronics N.V. Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 February 2003 Document order number: 9397 750 11128 PMV213SN TrenchMOS™ standard level FET ...