SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN015-100B

Manufacturer Part NumberPSMN015-100B
DescriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
ManufacturerNXP Semiconductors
PSMN015-100B datasheet
 


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PSMN015-100B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 06 — 17 December 2009
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
1.4 Quick reference data
Table 1.
Symbol Parameter
V
drain-source voltage T
DS
I
drain current
D
P
total power
tot
dissipation
Dynamic characteristics
Q
gate-drain charge
GD
Static characteristics
R
drain-source
DSon
on-state resistance
Quick reference
Conditions
≥ 25 °C; T
≤ 175 °C
j
j
T
= 25 °C; V
mb
GS
see
Figure 1
and
T
= 25 °C; see
mb
V
= 10 V; I
= 75 A;
GS
D
V
= 80 V; T
= 25 °C;
DS
j
see
Figure 11
V
= 10 V; I
= 25 A;
GS
D
T
= 25 °C;
j
see
Figure 9
and
Product data sheet
Rated for avalanche ruggedness
Switched-mode power supplies
Min
Typ
Max
-
-
100
= 10 V;
-
-
75
3
Figure 2
-
-
300
-
35
-
-
12
15
10
Unit
V
A
W
nC
mΩ

PSMN015-100B Summary of contents

  • Page 1

    ... PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

  • Page 2

    ... Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω unclamped 0.11 ms Rev. 06 — 17 December 2009 PSMN015-100B Graphic symbol mbb076 Version SOT404 Min Max - 100 - 100 - 60.8 and 3 ...

  • Page 3

    ... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = V /I DSon Rev. 06 — 17 December 2009 PSMN015-100B 03aa16 50 100 150 T (°C) mb 03am53 = 10 μs p 100 μ (V) DS © NXP B.V. 2009. All rights reserved. ...

  • Page 4

    ... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN015-100B_6 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint; vertical in still air −4 − Rev. 06 — 17 December 2009 PSMN015-100B Min Typ Max - - 0 03am52 t p δ = ...

  • Page 5

    ... 5.6 Ω °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 06 — 17 December 2009 PSMN015-100B Min Typ Max Unit 100 - - 4 0.05 10 µA ...

  • Page 6

    ... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 06 — 17 December 2009 PSMN015-100B 03am56 V > DSon 175 ° ° (V) GS 03aa32 max typ min 0 ...

  • Page 7

    ... C (pF 100 − (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 06 — 17 December 2009 PSMN015-100B 03al21 0 60 120 180 T (°C) j 03am58 C iss C oss C rss (V) © NXP B.V. 2009. All rights reserved. ...

  • Page 8

    ... Fig 13. Source current as a function of source-drain voltage; typical values PSMN015-100B_6 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0.3 0.6 0.9 Rev. 06 — 17 December 2009 PSMN015-100B 03am57 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

  • Page 9

    ... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 06 — 17 December 2009 PSMN015-100B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...

  • Page 10

    ... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PSMN015-100B separated from data sheet PSMN015_100P_100B-05. Product data Rev. 06 — 17 December 2009 ...

  • Page 11

    ... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 06 — 17 December 2009 PSMN015-100B © NXP B.V. 2009. All rights reserved ...

  • Page 12

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 December 2009 Document identifier: PSMN015-100B_6 ...