PSMN015-100B NXP Semiconductors, PSMN015-100B Datasheet - Page 3

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN015-100B

Manufacturer Part Number
PSMN015-100B
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN015-100B
Manufacturer:
NXP
Quantity:
72 000
Part Number:
PSMN015-100B
Manufacturer:
NXP
Quantity:
12 500
Part Number:
PSMN015-100B
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
PSMN015-100B
Manufacturer:
NXP
Quantity:
17 582
Company:
Part Number:
PSMN015-100B
Quantity:
50
NXP Semiconductors
PSMN015-100B_6
Product data sheet
Fig 1.
Fig 3.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
1
100
Limit R
DSon
150
T
= V
mb
DS
03an67
(°C)
/I
Rev. 06 — 17 December 2009
D
10
200
DC
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
t
100 μ s
1 ms
10 ms
2
p
= 10 μs
50
V
DS
(V)
PSMN015-100B
100
03am53
10
3
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
3 of 12

Related parts for PSMN015-100B