PSMN015-100B NXP Semiconductors, PSMN015-100B Datasheet - Page 4

• Manufacturer Part Number: PSMN015-100B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN015-100B_6
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
10
−1
−2
−3
1
10
−5
δ
0.2
0.1
0.05
0.02
= 0.5
single pulse
Conditions
see
mounted on a printed-circuit board;
minimum footprint; vertical in still air
10
Figure 4
−4
Rev. 06 — 17 December 2009
N-channel TrenchMOS SiliconMAX standard level FET
10
−3
10
P
−2
t
p
T
t
PSMN015-100B
p
(s)
Min
-
-
δ =
03am52
t
T
t
p
10
Typ
-
50
−1
© NXP B.V. 2009. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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