PSMN015-60BS NXP Semiconductors, PSMN015-60BS Datasheet

PSMN015-60BS

Manufacturer Part Number
PSMN015-60BS
Description
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure 12
Figure 13
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 60 V; R
14; see
j
D
D
D
≤ 175 °C
j(init)
GS
GS
= 15 A; T
= 15 A; T
= 25 A; V
= 50 Ω; unclamped
Figure 2
= 10 V; see
= 25 °C; I
Figure 15
j
j
DS
= 100 °C;
= 25 °C;
= 30 V;
D
= 50 A;
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
12.6
4.7
20.9
-
175
-
Max
60
50
86
23.7
14.8
-
44
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN015-60BS Summary of contents

Page 1

... PSMN015-60BS N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... T pulsed ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS Graphic symbol mbb076 3 Version SOT404 Min Max - kΩ -20 ...

Page 3

... N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK 003aae028 P (%) 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS 120 der 100 Normalized total power dissipation as a function of mounting base temperature V (V) DS 03aa16 150 200 T (° ...

Page 4

... Product data sheet N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS Min Typ Max - 1 1. 003aae030 δ ...

Page 5

... DS see Figure MHz °C; see Figure 1.2 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS Min Typ Max 4 0. ...

Page 6

... 003aae033 (A) D Fig 6. 003aae035 R C iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS Min Typ = 25 ° 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...

Page 7

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS 03aa35 min typ max (V) GS 003aad696 0 60 120 180 T (°C) j © ...

Page 8

... D Fig 14. Gate charge waveform definitions 003aae038 10 C (pF (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS GS(pl) V GS(th GS1 GS2 ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN015-60BS v.2 20120301 • Modifications: Status changed from objective to product. • Various changes to content. PSMN015-60BS v.1 20111021 PSMN015-60BS Product data sheet N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...

Page 11

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS © NXP B.V. 2012. All rights reserved ...

Page 12

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN015-60BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 March 2012 Document identifier: PSMN015-60BS ...

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