PSMN035-150B NXP Semiconductors, PSMN035-150B Datasheet
PSMN035-150B
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PSMN035-150B Summary of contents
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... PSMN035-150B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 17 November 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... j(init Ω; see unclamped 0.1 ms ≤ °C; sup GS j(init Ω; unclamped; see R Figure 4 GS Rev. 04 — 17 November 2009 PSMN035-150B Graphic symbol mbb076 Version SOT404 Min Max - 150 - 150 - ...
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... −3 150 200 10 T (°C) mb Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration Rev. 04 — 17 November 2009 PSMN035-150B 003aaa016 = DSon μ 100 μ D. 100 ms t ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PSMN035-150B_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 5 mounted on printed-circuit board; minimum footprint Single Pulse −5 −4 − Rev. 04 — 17 November 2009 PSMN035-150B Min Typ Max - 0 003aaa018 t p δ ...
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... °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 04 — 17 November 2009 PSMN035-150B Min Typ Max Unit 150 - - 0.05 10 µ 500 µ ...
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... V (V) GS Fig 9. Forward transconductance as a function of drain current; typical values Rev. 04 — 17 November 2009 PSMN035-150B 003aaa020 × R > DSon 175 ° ° (V) GS 003aaa025 = 25 ° 175 ° ...
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... ( 120 160 0 T (°C) j Fig 13. Gate-source voltage as a function of gate charge; typical values Rev. 04 — 17 November 2009 PSMN035-150B 003aaa021 4.6 V 4.8 V 5.0 V 5.2 V 5 (A) D 003aaa028 = °C j ...
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... Ciss Coss Crss (V) DS Fig 15. Source current as a function of source-drain voltage; typical values Rev. 04 — 17 November 2009 PSMN035-150B 003aaa027 = 175 ° ° 0.2 0.4 0.6 0.8 1.0 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 04 — 17 November 2009 PSMN035-150B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... Product data sheet - The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PSMN035-150B separated from data sheet PSMN035-150_SERIES_HG_3. Product specification - Product specification ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 17 November 2009 PSMN035-150B © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 November 2009 Document identifier: PSMN035-150B_4 ...