BLD6G22LS-50 NXP Semiconductors, BLD6G22LS-50 Datasheet

BLD6G22LS-50

Manufacturer Part Number
BLD6G22LS-50
Description
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLD6G22LS-50
Manufacturer:
HITTITE
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using
NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA
base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak
device, input splitter and output combiner are integrated in a single package. This
package consists of one gate and drain lead and two extra leads of which one is used for
biasing the peak amplifier and the other is not connected. It only requires the proper
input/output match and bias setting as with a normal class-AB transistor.
Table 1.
RF performance at T
[1]
[2]
Mode of operation
W-CDMA
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty
transistor
Rev. 3 — 17 August 2010
Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz:
Fully optimized integrated Doherty concept:
Test signal: 2-carrier W-CDMA; test model 1; 64 DPCH; PAR = 8.3 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
I
Dq
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
= 170 mA (main); V
Average output power = 8 W
Power gain = 14 dB
Efficiency = 40 %
integrated asymmetrical power splitter at input
integrated power combiner
peak biasing down to 0 V
low junction temperature
high efficiency
[1][2]
Typical performance
h
= 25 C.
GS(amp)peak
f
(MHz)
2110 to 2170
= 0 V.
V
(V)
28
DS
P
(W)
8
L(AV)
G
(dB)
14
p
(%)
40
D
Product data sheet
ACPR
(dBc)
30
P
(W)
55
L(3dB)

Related parts for BLD6G22LS-50

BLD6G22LS-50 Summary of contents

Page 1

... BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz ...

Page 2

... Connected to flange. 3. Ordering information Table 3. Type number BLD6G22L-50 BLD6G22LS-50 - BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Pinning Description drain gate + bias main source n.c. bias peak drain gate + bias main source n.c. bias peak ...

Page 3

... Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 2 RF-input/bias main 90 5 bias peak Block diagram of BLD6G22L-50 and BLD6G22LS-50 Limiting values Parameter drain-source voltage main amplifier gate-source voltage peak amplifier gate-source voltage drain current storage temperature ...

Page 4

... Mode of operation: Pulsed CW GS(amp)peak Symbol P L(3dB) 8.1 Ruggedness in Doherty operation The BLD6G22L-50 and BLD6G22LS-50 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 8.2 Impedance information Table 9. Measured load-pull data; typical values unless otherwise specified. ...

Page 5

... GS(amp)peak ( 0.6 V GS(amp)peak ( 0.8 V GS(amp)peak Fig 3. Power gain as a function of load power; typical values BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor gate Definition of transistor impedance 001aam438 (dBm case = 100 period. ...

Page 6

... MHz Fig 5. Power gain as a function of load power; typical values ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 7. BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 001aam440 (%) (1) (2) ( (dBm ...

Page 7

... V GS(amp)peak Fig 8. Power gain as a function of average load power; typical values Fig 10. Power gain and drain efficiency as function of load power; typical values BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 001aam443 (6) (5) (4) (3) (2) (1) ...

Page 8

... GS(amp)peak 0.01 % probability on CCDF. ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 11. Power gain as a function of average load power; typical values BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 001aam446 D (%) (dBm) L(AV ...

Page 9

... C11, C13, C14, C16 C17 C21 L1 [1] American Technical Ceramics type 100B or capacitor of same quality. BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor V GS(amp)main INPUT C21 C4 R2 The striplines are on a double copper-clad gold plated Rogers 4350B Printed-Circuit Board (PCB) with = 3 ...

Page 10

... Outline version IEC SOT1130A Fig 14. Package outline SOT1130A BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor ...

Page 11

... Outline version IEC SOT1130B Fig 15. Package outline SOT1130B BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor ...

Page 12

... Revision history Document ID BLD6G22L-50_BLD6G22LS-50 v.3 Modifications: BLD6G22L-50_BLD6G22LS-50 v.2 BLD6G22L-50_BLD6G22LS-50 v.1 BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Abbreviations Description Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor ...

Page 13

... BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor [3] Definition This document contains data from the objective specification for product development. ...

Page 14

... For sales office addresses, please send an email to: BLD6G22L-50_BLD6G22LS-50 Product data sheet BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 August 2010 Document identifier: BLD6G22L-50_BLD6G22LS-50 ...

Related keywords