BLF175 NXP Semiconductors, BLF175 Datasheet

Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range

BLF175

Manufacturer Part Number
BLF175
Description
Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 1997 Dec 15
DATA SHEET
BLF175
HF/VHF power MOS transistor
DISCRETE SEMICONDUCTORS
M3D065
2003 Jul 22

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BLF175 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 M3D065 2003 Jul 22 ...

Page 2

... It must never be thrown out with the general or domestic waste (V) (mA 800 50 150 Product specification 4 3 MSB057 CAUTION WARNING (W) (dB) (%) 8 (PEP (PEP) typ. 24 typ typ. 20 typ. 65 BLF175 MBB072 d 3 (dB) 40 (1) typ. 35 ...

Page 3

... Short-time operation during mismatch. 3 Product specification MIN. 125 +150 200 CONDITIONS VALUE = tot = tot 80 ( 120 Fig.3 Power derating curves. BLF175 MAX. UNIT UNIT 2.6 K/W 0.3 K/W MGP063 160 ...

Page 4

... MIN. TYP 125 1 MHz 130 = MHz MHz 3.7 LIMITS (V) MIN. O 3.3 P 3.4 Q 3.5 R 3.6 S 3.7 T 3.8 U 3.9 V 4.0 W 4.1 X 4.2 Y 4.3 Z 4.4 BLF175 MAX. UNIT V 100 4.5 V 100 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 ...

Page 5

... Drain current as a function of gate-source voltage; typical values. 400 300 200 C is 100 MHz. Input and output capacitance as functions of drain-source voltage; typical values. BLF175 MGP065 10 MGP067 (V) ...

Page 6

... Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. 2003 Jul 22 MGP068 ( (V) (mA) (dB) 50 800 24 typ Product specification BLF175 (1) (1) (dB) (dB typ. 44 typ ...

Page 7

... Fig.12 Third order intermodulation distortion Product specification (W) PEP = 0 28.000 MHz 28.001 MHz function of load power; typical values (MHz 0 MHz function of frequency; typical values. BLF175 MGP070 20 MGP072 40 ...

Page 8

... Philips Semiconductors HF/VHF power MOS transistor handbook, full pagewidth 50 input MHz. 2003 Jul D.U. Fig.13 Test circuit for class-A operation. 8 Product specification output MGP073 BLF175 ...

Page 9

... 1500 10 9 Product specification BLF175 DIMENSIONS CATALOGUE NO. 2222 852 47103 2222 852 47104 2222 852 47103 2222 852 47104 2222 030 28109 length 3.3 mm; int. dia. 5 mm; leads length 30 mm; ...

Page 10

... Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Fig.14 Component layout for 28 MHz class-A test circuit. 2003 Jul 22 100 mounting screw strap MGP074 Product specification BLF175 ...

Page 11

... Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. 2. 2-tone efficiency. Ruggedness in class-AB operation The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P single tone under the following conditions MHz. ...

Page 12

... Fig.19 Test circuit for class-AB operation. 12 Product specification (dB 0. 28.000 MHz 28.001 MHz function of load power; typical values. C10 C7 L3 C11 BLF175 MGP079 (W) PEP 50 output V D C12 MGP080 ...

Page 13

... 1650 nH 380 Product specification BLF175 DIMENSIONS CATALOGUE NO. 2222 809 07011 2222 852 47104 2222 030 28109 length 11 mm; int. dia. 6 mm; leads length 10 mm; width 6 mm length 20 mm; ...

Page 14

... Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Fig.20 Component layout for 28 MHz class-AB test circuit. 2003 Jul 22 150 strap Product specification BLF175 strap rivet 70 C9 C12 C10 C8 C11 MGP081 ...

Page 15

... Class-AB operation (PEP Fig.22 Load impedance as a function of frequency MGP085 (MHz) 15 Product specification 0. (series components); typical values. BLF175 MGP084 30 f (MHz) ...

Page 16

... Class-B operation Fig.25 Load impedance as a function of frequency 16 Product specification (W) (dB) (%) 30 typ. 20 typ 100 f (MHz mA (series components); typical values. BLF175 MGP087 200 ...

Page 17

... Philips Semiconductors HF/VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-B operation mA Fig.26 Power gain as a function of frequency; typical values. 2003 Jul 22 MGP088 200 f (MHz) 17 Product specification BLF175 ...

Page 18

... Philips Semiconductors HF/VHF power MOS transistor BLF175 scattering parameters 100 mA; note (MHz 0.86 110.20 10 0.83 139.40 20 0.85 155.70 30 0.88 161.50 40 0.90 164.90 50 0.92 167.10 60 0.94 169.00 70 0.96 170.70 80 0.96 172.20 90 0.97 173.40 100 0.97 174.30 125 0.99 176.50 150 0.99 178.10 175 0.99 179.80 200 1.00 179.20 250 1.00 177.00 300 1 ...

Page 19

... REFERENCES JEDEC EIAJ 24.87 6.48 9.78 0.25 0.51 24.64 6.22 9.39 0.255 0.385 0.980 0.010 0.020 0.970 0.245 0.370 EUROPEAN PROJECTION Product specification BLF175 SOT123A 45 ISSUE DATE 99-03-29 ...

Page 20

... Product specification BLF175 DEFINITION These products are not Philips Semiconductors ...

Page 21

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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