BLF177 NXP Semiconductors, BLF177 Datasheet - Page 2

• Manufacturer Part Number: BLF177
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (V
for matched pair applications. Refer
to the handbook 'General' section for
further information.
PINNING
QUICK REFERENCE DATA
RF performance at T
SSB class-AB
CW class-B
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.
Designed for industrial and military
applications in the HF/VHF
frequency range.
HF/VHF power MOS transistor
PIN
1
2
3
4
OPERATION
MODE OF
drain
source
gate
source
GS
) information is provided
DESCRIPTION
h
= 25 C in a common source test circuit.
(MHz)
108
28
f
andbook, halfpage
PIN CONFIGURATION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
V
(V)
50
50
DS
Rev. 06 - 24 January 2007
1
4
150 (PEP)
Fig.1 Simplified outline (SOT121B) and symbol.
(W)
150
P
L
typ. 19
(dB)
G
20
p
WARNING
CAUTION
MLA876
3
2
typ. 70
(%)
35
D
Product specification
g
MBB072
(dB)
d
30
3
d
s
BLF177
2 of 19
(dB)
d
30
5