BLF177 NXP Semiconductors, BLF177 Datasheet - Page 6

• Manufacturer Part Number: BLF177
• Manufacturer: NXP Semiconductors

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
T
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; V
handbook, halfpage
h
SSB, class-AB
OPERATION
HF/VHF power MOS transistor
= 25 C; R
V
Fig.8
MODE OF
power the values should be decreased by 6 dB.
GS
(pF)
C rs
300
200
100
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
th mb-h
10
= 0.2 K/W; Z
(MHz)
28
f
20
30
L
V
= 6.25 + j0 ; f
(V)
50
DS
DS
= 50 V at rated output power.
40
V DS (V)
MGP093
I
(A)
0.7
DQ
50
Rev. 06 - 24 January 2007
1
= 28.000 MHz; f
20 to 150
(PEP)
(W)
P
L
2
= 28.001 MHz unless otherwise specified.
typ. 35
(dB)
G
20
p
typ. 40
(%)
35
D
(note 1)
typ. 35
(dB)
Product specification
d
30
3
BLF177
6 of 19
(note 1)
typ. 38
(dB)
d
30
5