BLF178P NXP Semiconductors, BLF178P Datasheet
BLF178P
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BLF178P Summary of contents
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... BLF178P Power LDMOS transistor Rev. 2 — 16 February 2012 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Test signal CW pulsed RF 1.2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage and an ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 BLF178P Power LDMOS transistor Simplified outline Graphic symbol [1] ...
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... Conditions Min 2.5 mA 110 500 BLF178P Typ Unit [1][2] 0.14 K/W [3] 0.04 K/W 001aak924 (s) p Typ Max Unit - - V 1.7 2.25 V 1.3 1.8 V A - 2.8 © NXP B.V. 2012. All rights reserved. ...
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... Dq Symbol Parameter D Fig 2. 6.1 Ruggedness in class-AB operation The BLF178P is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions mA BLF178P Product data sheet DC characteristics …continued C; per section unless otherwise specified. drain cut-off current ...
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... Ideal ( mA 108 MHz 60.8 dBm (1214 W) L(1dB) = 61.2 dBm (1319 W) L(3dB) Output power as a function of input power; typical values BLF178P aaa-002243 ( (dBm 100 s; p © NXP B.V. 2012. All rights reserved ...
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... 108 MHz ( ( ( ( ( 160 mA Dq Drain efficiency as a function of output power; typical values BLF178P aaa-002245 1300 1500 P (W) L © NXP B.V. 2012. All rights reserved ...
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... ( ( ( ( ( ( ( Drain efficiency as a function of output power; typical values BLF178P aaa-002247 (7) (8) 1200 1400 P (W) L © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 7.3 Test circuit BLF178P INTPUT REV1 T1 Printed-Circuit Board (PCB): RF 35; See Table 9 for a list of components. Fig 10. Component layout for class-AB production test circuit Table 9. For test circuit see Component C1, C2, C5, C6, C14, C15, C21, C22 C3 C4 ...
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... 3.48 3.30 2.26 41.28 10.29 35.56 2.97 3.05 2.01 10.03 41.02 0.137 0.130 0.089 1.625 0.405 1.400 0.117 0.120 0.079 1.615 0.395 EUROPEAN PROJECTION BLF178P SOT539A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 00-03-03 10-02-02 © NXP B.V. 2012. All rights reserved ...
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... FM HF LDMOS LDMOST RF SMD VSWR 11. Revision history Table 11. Revision history Document ID Release date BLF178P v.2 20120216 • Modifications The status of this document has been changed to Product data sheet. • Table 1 on page • Table 1 on page • Section 1.2 on page • Table 6 on page • ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 BLF178P Power LDMOS transistor © NXP B.V. 2012. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 February 2012 BLF178P Power LDMOS transistor © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF178P All rights reserved. Date of release: 16 February 2012 Document identifier: BLF178P ...