A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band

BLF178XR

Manufacturer Part NumberBLF178XR
DescriptionA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
ManufacturerNXP Semiconductors
BLF178XR datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (193Kb)Embed
Next
BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 1 — 30 January 2012
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1.
Mode of operation
CW
pulsed RF
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
I
of 40 mA, a t
Dq
Output power = 1400 W
Power gain = 29 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
Application information
f
(MHz)
108
108
of 100 s with  of 20 %:
p
Objective data sheet
V
P
G
DS
L
p
(V)
(W)
(dB)
50
1200
26
50
1400
29
D
(%)
75
72

BLF178XR Summary of contents

  • Page 1

    ... BLF178XR; BLF178XRS Power LDMOS transistor Rev. 1 — 30 January 2012 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Mode of operation CW pulsed RF 1.2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage and an ...

  • Page 2

    ... BLF178XRS 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF178XR_BLF178XRS Objective data sheet BLF178XR; BLF178XRS Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name ...

  • Page 3

    ... Transient thermal impedance from junction to case as a function of pulse duration All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF178XR; BLF178XRS Power LDMOS transistor Conditions = 150  150  100   ...

  • Page 4

    ... C; unless otherwise specified class-AB production test circuit. case power gain input return loss drain efficiency All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF178XR; BLF178XRS Power LDMOS transistor Conditions Min 2.5 mA 110 ...

  • Page 5

    ... NXP Semiconductors Fig 2. 6.3 Ruggedness in class-AB operation The BLF178XR and BLF178XRS are capable of withstanding a load mismatch corresponding to VSWR > through all phases under the following conditions BLF178XR_BLF178XRS Objective data sheet BLF178XR; BLF178XRS  & RVV S)      MHz. GS Output capacitance as a function of drain-source voltage; typical values per section = 40 mA ...

  • Page 6

    ... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF178XR; BLF178XRS Power LDMOS transistor ...

  • Page 7

    ... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 4. Package outline SOT539B BLF178XR_BLF178XRS Objective data sheet BLF178XR; BLF178XRS scale D ...

  • Page 8

    ... ESD HF LDMOS LDMOST RF VSWR XR 10. Revision history Table 9. Revision history Document ID Release date BLF178XR_BLF178XRS v.1 20120130 BLF178XR_BLF178XRS Objective data sheet BLF178XR; BLF178XRS Abbreviations Description Continuous Wave Direct Current ElectroStatic Discharge High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency ...

  • Page 9

    ... This document supersedes and replaces all information supplied prior to the publication hereof. BLF178XR_BLF178XRS Objective data sheet BLF178XR; BLF178XRS [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

  • Page 10

    ... For sales office addresses, please send an email to: BLF178XR_BLF178XRS Objective data sheet BLF178XR; BLF178XRS product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s ...

  • Page 11

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF178XR_BLF178XRS All rights reserved. Date of release: 30 January 2012 ...