BLF178XR NXP Semiconductors, BLF178XR Datasheet - Page 3

• Manufacturer Part Number: BLF178XR
• Description: A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
BLF178XR_BLF178XRS
Objective data sheet
Table 5.
[1]
[2]
[3]
Symbol Parameter
R
Z
Fig 1.
th(j-c)
th(j-c)
T
Rth(j-c) is measured under RF conditions.
See
j
=
.:
(1)  = 1 %
(2)  = 2 %
(3)  = 5 %
(4)  = 10 %
(5)  = 20 %
(6)  = 50 %
(7)  = 100 % (DC)
is the junction temperature.
WK MF
M
M
Figure



Transient thermal impedance from junction to case as a function of pulse
duration
thermal resistance from junction to case
transient thermal impedance from junction
to case


Thermal characteristics

1.
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Rev. 1 — 30 January 2012




BLF178XR; BLF178XRS


Conditions
T
T
 = 20 %
j
j
= 150 C
= 150 C; t



p

= 100 s;
Power LDMOS transistor

W
S
DDD
6
© NXP B.V. 2012. All rights reserved.
[1][2]
[3]

Typ
0.12
0.035 K/W
3 of 11
Unit
K/W