BLF178XR NXP Semiconductors, BLF178XR Datasheet - Page 5

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band

BLF178XR

Manufacturer Part Number
BLF178XR
Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF178XR
Manufacturer:
MURATA
Quantity:
1 001
NXP Semiconductors
BLF178XR_BLF178XRS
Objective data sheet
6.3 Ruggedness in class-AB operation
The BLF178XR and BLF178XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
Fig 2.
DS
= 50 V; I
V
Output capacitance as a function of drain-source voltage; typical values per
section
GS
Dq
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
= 40 mA; P
&
S)
RVV
Rev. 1 — 30 January 2012





L
= 1400 W pulsed; f = 108 MHz.

BLF178XR; BLF178XRS


9
'6

9

Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
5 of 11

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