BLF178XR NXP Semiconductors, BLF178XR Datasheet - Page 8

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band

BLF178XR

Manufacturer Part Number
BLF178XR
Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF178XR
Manufacturer:
MURATA
Quantity:
1 001
NXP Semiconductors
8. Handling information
9. Abbreviations
10. Revision history
Table 9.
BLF178XR_BLF178XRS
Objective data sheet
CAUTION
Document ID
BLF178XR_BLF178XRS v.1 20120130
Revision history
Table 8.
Acronym
CW
DC
ESD
HF
LDMOS
LDMOST
RF
VSWR
XR
Release date
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Continuous Wave
Direct Current
ElectroStatic Discharge
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Voltage Standing-Wave Ratio
eXtremely Rugged
Rev. 1 — 30 January 2012
Data sheet status
Objective data sheet
BLF178XR; BLF178XRS
Change notice
-
Power LDMOS transistor
Supersedes
-
© NXP B.V. 2012. All rights reserved.
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