BLF578XR NXP Semiconductors, BLF578XR Datasheet

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band

BLF578XR

Manufacturer Part Number
BLF578XR
Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF578XR
Manufacturer:
ST
Quantity:
1 439
Part Number:
BLF578XR
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
BLF578XRS
Manufacturer:
NXP
Quantity:
1 400
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF578 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
Table 1.
Mode of operation
CW
pulsed RF
BLF578XR; BLF578XRS
Power LDMOS transistor
Rev. 1 — 30 January 2012
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
Dq
of 40 mA, a t
Output power = 1400 W
Power gain = 23 dB
Efficiency = 69 %
Application information
p
of 100 s with  of 20 %:
f
(MHz)
108
225
50
V
(V)
50
DS
P
(W)
1200
1400
L
Objective data sheet
G
(dB)
26
23
p
(%)
75
69
D

Related parts for BLF578XR

BLF578XR Summary of contents

Page 1

... BLF578XR; BLF578XRS Power LDMOS transistor Rev. 1 — 30 January 2012 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance ...

Page 2

... BLF578XRS 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name ...

Page 3

... Transient thermal impedance from junction to case as a function of pulse duration All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF578XR; BLF578XRS Power LDMOS transistor Conditions = 150  150  100   ...

Page 4

... C; unless otherwise specified class-AB production test circuit. case power gain input return loss drain efficiency All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF578XR; BLF578XRS Power LDMOS transistor Conditions Min 2.5 mA 110 ...

Page 5

... NXP Semiconductors Fig 2. 6.3 Ruggedness in class-AB operation The BLF578XR and BLF578XRS are capable of withstanding a load mismatch corresponding to VSWR > through all phases under the following conditions BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS  & RVV S)      MHz. GS Output capacitance as a function of drain-source voltage; typical values per section = 40 mA ...

Page 6

... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF578XR; BLF578XRS Power LDMOS transistor ...

Page 7

... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 4. Package outline SOT539B BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS scale D ...

Page 8

... ESD HF LDMOS LDMOST RF VSWR XR 10. Revision history Table 9. Revision history Document ID Release date BLF578XR_BLF578XRS v.1 20120130 BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS Abbreviations Description Continuous Wave Direct Current ElectroStatic Discharge High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency ...

Page 9

... This document supersedes and replaces all information supplied prior to the publication hereof. BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 10

... For sales office addresses, please send an email to: BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF578XR_BLF578XRS All rights reserved. Date of release: 30 January 2012 ...

Related keywords