BLF578XR NXP Semiconductors, BLF578XR Datasheet
BLF578XR
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BLF578XR Summary of contents
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... BLF578XR; BLF578XRS Power LDMOS transistor Rev. 1 — 30 January 2012 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance ...
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... BLF578XRS 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name ...
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... Transient thermal impedance from junction to case as a function of pulse duration All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF578XR; BLF578XRS Power LDMOS transistor Conditions = 150 150 100 ...
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... C; unless otherwise specified class-AB production test circuit. case power gain input return loss drain efficiency All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF578XR; BLF578XRS Power LDMOS transistor Conditions Min 2.5 mA 110 ...
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... NXP Semiconductors Fig 2. 6.3 Ruggedness in class-AB operation The BLF578XR and BLF578XRS are capable of withstanding a load mismatch corresponding to VSWR > through all phases under the following conditions BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS & RVV S) MHz. GS Output capacitance as a function of drain-source voltage; typical values per section = 40 mA ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 January 2012 BLF578XR; BLF578XRS Power LDMOS transistor ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 4. Package outline SOT539B BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS scale D ...
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... ESD HF LDMOS LDMOST RF VSWR XR 10. Revision history Table 9. Revision history Document ID Release date BLF578XR_BLF578XRS v.1 20120130 BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS Abbreviations Description Continuous Wave Direct Current ElectroStatic Discharge High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF578XR_BLF578XRS Objective data sheet BLF578XR; BLF578XRS product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF578XR_BLF578XRS All rights reserved. Date of release: 30 January 2012 ...