BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet

A 500W LDMOS RF power transistor for transmitter applications and industrial applications

BLF6G15LS-500H

Manufacturer Part Number
BLF6G15LS-500H
Description
A 500W LDMOS RF power transistor for transmitter applications and industrial applications
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BLF6G15LS-500H
Manufacturer:
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Quantity:
5 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
A 500 W LDMOS RF power transistor for transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 65 W
average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for
digital transmitter applications.
Table 1.
RF performance at V
[1]
[2]
Mode of operation
2-tone, class-AB
DVB-T (8k OFDM)
BLF6G15L-500H;
BLF6G15LS-500H
Power LDMOS transistor
Rev. 2 — 16 September 2011
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Digital transmitter applications DVB at 1.5 GHz
Industrial applications at 1.5 GHz
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
Test information
DS
= 50 V; I
f
(MHz)
1452 to 1492
1452 to 1492
Dq
= 1.3 A.
250
P
(W)
65
L(AV)
G
(dB)
15
16
p
(%)
34
19
D
IMD3
(dBc)
24
-
Product data sheet
IMD
(dBc)
-
32
shldr
[1]
PAR
(dB)
-
9
[2]

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BLF6G15LS-500H Summary of contents

Page 1

... BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G15L-500H (SOT539A BLF6G15LS-500H (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G15L-500H BLF6G15LS-500H 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

... Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9 0.01 % probability on CCDF. 6.1 Ruggedness in class-AB operation The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H ...

Page 4

... 1 1490 MHz Fig 2. 2-Tone power gain and drain efficiency as function of average load power; typical values BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H Typical impedance Z S  1.226  j2.663 1.375  j2.757 1.15  j2.735 gate Z S Definition of transistor impedance ...

Page 5

... PAR 9 8 η 1400 1450 1 Fig 6. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H 001aao063 -5 IMD shldr (dBc) IMD shldr -15 - -35 -45 300 400 P (W) L(AV) Fig 5. ...

Page 6

... The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  . = 100  120  140  146  160  180  200 C j BLF6G15LS-500H electromigration (I All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 September 2011 Power LDMOS transistor 001aao067 (1) (2) (3) ( (A) DS(DC) , total device) DS(DC) © ...

Page 7

... Component C1 C2, C7, C16, C17 C3, C8 C4, C5, C9, C10 C6, C11 C12, C13 C18, C19 C15 R1 BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H 3.66; thickness = 0.30 mm; thickness copper plating = 35 m. r List of components for component layout. Description electrolytic capacitor multilayer ceramic chip capacitor ...

Page 8

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 10. Package outline SOT539A BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 11. Package outline SOT539B BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H scale ...

Page 10

... Revision history Table 11. Revision history Document ID BLF6G15L-500H_6G15LS-500H v.2 20110916 Modifications: BLF6G15L-500H_6G15LS-500H v.1 20110511 BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H Abbreviations Description Complementary Cumulative Distribution Function Digital Video Broadcast - Terrestrial Digital Video Broadcast ElectroStatic Discharge Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor ...

Page 11

... BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... For more information, please visit: For sales office addresses, please send an email to: BLF6G15L-500H_6G15LS-500H Product data sheet BLF6G15L-500H; BLF6G15LS-500H 12.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S ...

Page 13

... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 BLF6G15L-500H; BLF6G15LS-500H Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...

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