BLF6G27L-40P NXP Semiconductors, BLF6G27L-40P Datasheet

40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF6G27L-40P

Manufacturer Part Number
BLF6G27L-40P
Description
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
40 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
Mode of operation
IS-95
Single carrier W-CDMA 2500 to 2700
BLF6G27L-40P;
BLF6G27LS-40P
Power LDMOS transistor
Rev. 1 — 4 July 2011
Excellent ruggedness
High efficiency
Low R
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
th
Typical performance
providing excellent thermal stability
f
(MHz)
2500 to 2700
case
= 25
C in a common source class-AB production test circuit.
I
(mA)
450
450
Dq
V
(V)
28
28
DS
P
(W)
12
20
L(AV)
G
(dB) (%) (dBc)
17.5
17.5
p
30
37
D
Product data sheet
ACPR
46
-
[1]
885k
ACPR
(dBc)
-
35
[2]
5M

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BLF6G27L-40P Summary of contents

Page 1

... BLF6G27L-40P; BLF6G27LS-40P Power LDMOS transistor Rev. 1 — 4 July 2011 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 Single carrier W-CDMA 2500 to 2700 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G27L-40P (SOT1121A BLF6G27LS-40P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G27L-40P BLF6G27LS-40P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

... L(AV  D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF6G27L-40P and BLF6G27LS-40P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C ...

Page 4

... MHz ( 2600 MHz ( 2650 MHz ( 2700 MHz Fig 1. Single carrier IS-95 power gain as a function of output power; typical values BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P 001aan553 (W) L Fig 2. All information provided in this document is subject to legal disclaimers. ...

Page 5

... MHz ( 2550 MHz ( 2600 MHz ( 2650 MHz ( 2700 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of output power; typical values BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P 001aan555 APCR (dBc) (1) (2) (3) (4) ( ...

Page 6

... 450 mA ( 2500 MHz ( 2550 MHz ( 2600 MHz ( 2650 MHz ( 2700 MHz Fig 7. Pulsed CW power gain as a function of output power; typical values BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P 001aan559 60 η D (%) (W) ...

Page 7

... MHz ( 2550 MHz ( 2600 MHz ( 2650 MHz ( 2700 MHz Fig 9. Single carrier W-CDMA power gain as a function of output power; typical values BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P 001aan561 η D (%) ( 2500 MHz ...

Page 8

... MHz ( 2550 MHz ( 2600 MHz ( 2650 MHz ( 2700 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of output power; typical values BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P 001aan563 APCR (dBc) (1) (2) (3) (4) (5) 30 ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 15. Package outline SOT1121A BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P ...

Page 10

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 16. Package outline SOT1121B BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P ...

Page 11

... LDMOS LDMOST N-CDMA PAR RF VSWR W-CDMA 10. Revision history Table 9. Revision history Document ID BLF6G27L-40P_BLF6G27LS-40P v.1 BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...

Page 12

... BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... For sales office addresses, please send an email to: BLF6G27L-40P_6G27LS-40P Product data sheet BLF6G27L-40P; BLF6G27LS-40P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 4 July 2011 Document identifier: BLF6G27L-40P_6G27LS-40P ...

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