BLF6G27L-40P NXP Semiconductors, BLF6G27L-40P Datasheet - Page 5

• Manufacturer Part Number: BLF6G27L-40P
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27L-40P_6G27LS-40P
Product data sheet
Fig 3.
Fig 5.
APCR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
−30
−35
−40
−45
−50
−55
−60
−65
855
12
10
8
6
4
2
0
V
Single carrier IS-95 ACPR at 885 kHz as a
function of output power; typical values
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
(3)
(4)
(5)
10
10
Dq
Dq
= 450 mA.
= 450 mA.
20
20
(1)
(2)
(3)
(4)
(5)
30
30
40
40
All information provided in this document is subject to legal disclaimers.
001aan555
001aan557
P
P
L
L
BLF6G27L-40P; BLF6G27LS-40P
(W)
(W)
50
50
Rev. 1 — 4 July 2011
Fig 4.
Fig 6.
APCR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
1980
−45
−55
−65
−75
100
80
60
40
20
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of output power; typical values
V
Single carrier IS-95 peak output power as a
function of output power; typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
= 450 mA.
= 450 mA.
20
20
(1)
(2)
(3)
(4)
(5)
Power LDMOS transistor
30
30
© NXP B.V. 2011. All rights reserved.
40
40
001aan556
001aan558
(1)
(2)
(3)
(4)
(5)
P
P
L
L
(W)
(W)
50
50
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