BLF6G27L-40P NXP Semiconductors, BLF6G27L-40P Datasheet - Page 8

• Manufacturer Part Number: BLF6G27L-40P
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27L-40P_6G27LS-40P
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
APCR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
−20
−25
−30
−35
−40
−45
−50
−55
5M
8
7
6
5
4
3
0
V
function of output power; typical values
0
V
ratio as a function of output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
(1)
(2)
(3)
(4)
(5)
= 450 mA.
= 450 mA.
20
20
30
30
(1)
(2)
(3)
(4)
(5)
40
40
All information provided in this document is subject to legal disclaimers.
001aan563
001aan565
P
P
L
L
BLF6G27L-40P; BLF6G27LS-40P
(W)
(W)
50
50
Rev. 1 — 4 July 2011
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
APCR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
−40
−45
−50
−55
−60
−65
100
10M
80
60
40
20
0
0
0
V
function of output power; typical values
V
function of output power; typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
= 450 mA.
= 450 mA.
20
20
Power LDMOS transistor
30
30
(1)
(2)
(3)
(4)
(5)
(1)
(2)
(3)
(4)
(5)
© NXP B.V. 2011. All rights reserved.
40
40
001aan564
001aan566
P
P
L
L
(W)
(W)
50
50
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