BLF6G27LS-40P NXP Semiconductors, BLF6G27LS-40P Datasheet - Page 3

• Manufacturer Part Number: BLF6G27LS-40P
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF6G27L-40P_6G27LS-40P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF6G27L-40P and BLF6G27LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
g
Symbol
P
G
RL

ACPR
V
I
I
I
R
DSS
DSX
GSS
j
case
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 28 V; I
= 25
885k

C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V

Parameter
thermal resistance from junction to case
C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Dq
1
= 450 mA; P
All information provided in this document is subject to legal disclaimers.
= 2500 MHz; f
BLF6G27L-40P; BLF6G27LS-40P
Rev. 1 — 4 July 2011
L
2
= 40 W (CW); f = 2500 MHz.
= 2700 MHz; RF performance at V
Conditions
V
V
V
V
V
V
I
I
D
D
GS
DS
GS
GS
DS
GS
DS
GS
= 2000 mA
= 1400 mA
= 10 V; I
= 10 V
= 10 V;
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
T
D
Conditions
P
P
P
P
DS
case
D
= 0.4 mA
L(AV)
L(AV)
L(AV)
L(AV)
+ 3.75 V;
DS
+ 3.75 V;
= 40 mA
= 28 V
= 0 V
= 80 C; P
= 12 W
= 12 W
= 12 W
= 12 W
DS
Power LDMOS transistor
= 28 V; I
Min
65
1.4
-
5.96
-
1.8
0.14
L
= 40 W
Min Typ Max Unit
-
15.5 17.5 -
-
26
-
© NXP B.V. 2011. All rights reserved.
Typ
-
1.8
-
7.2
-
2.9
0.36
Dq
12
10 -
30
46 41
= 450 mA;
Max
-
2.4
1.4
-
150
-
-
Typ
0.7
-
-
3 of 14
Unit
K/W
W
dB
dB
%
dBc
Unit
V
V
A
A
nA
S
