BLF6G27LS-40P NXP Semiconductors, BLF6G27LS-40P Datasheet - Page 4

40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF6G27LS-40P

Manufacturer Part Number
BLF6G27LS-40P
Description
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BLF6G27LS-40P
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Part Number:
BLF6G27LS-40P
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Quantity:
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Part Number:
BLF6G27LS-40PG
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0
NXP Semiconductors
BLF6G27L-40P_6G27LS-40P
Product data sheet
Fig 1.
(dB)
G
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
p
19
17
15
13
0
V
Single carrier IS-95 power gain as a function of
output power; typical values
DS
= 28 V; I
10
7.2 Single carrier IS-95
(1)
(2)
(3)
(4)
(5)
Dq
= 450 mA.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
20
30
40
All information provided in this document is subject to legal disclaimers.
001aan553
P
L
BLF6G27L-40P; BLF6G27LS-40P
(W)
50
Rev. 1 — 4 July 2011
Fig 2.
(%)
η
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
D
50
40
30
20
10
0
0
V
Single carrier IS-95 drain efficiency as a
function of output power; typical values
DS
= 28 V; I
10
Dq
= 450 mA.
20
Power LDMOS transistor
30
(1)
(2)
(3)
(4)
(5)
© NXP B.V. 2011. All rights reserved.
40
001aan554
P
L
(W)
50
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