BLF6G27LS-40P NXP Semiconductors, BLF6G27LS-40P Datasheet - Page 6

• Manufacturer Part Number: BLF6G27LS-40P
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27L-40P_6G27LS-40P
Product data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
p
19
17
15
13
11
0
V
Pulsed CW power gain as a function of output
power; typical values
DS
= 28 V; I
7.3 Pulsed CW
20
Dq
= 450 mA.
40
(1)
(2)
(3)
(4)
(5)
60
All information provided in this document is subject to legal disclaimers.
P
001aan559
L
(W)
BLF6G27L-40P; BLF6G27LS-40P
80
Rev. 1 — 4 July 2011
Fig 8.
(%)
η
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
D
60
40
20
0
0
V
Pulsed CW drain efficiency as a function of
output power; typical values
DS
= 28 V; I
20
Dq
= 450 mA.
40
Power LDMOS transistor
(1)
(2)
(3)
(4)
(5)
60
© NXP B.V. 2011. All rights reserved.
P
001aan560
L
(W)
80
6 of 14