BLF6G27LS-40P NXP Semiconductors, BLF6G27LS-40P Datasheet - Page 7

• Manufacturer Part Number: BLF6G27LS-40P
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27L-40P_6G27LS-40P
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
p
19
17
15
13
11
0
V
Single carrier W-CDMA power gain as a
function of output power; typical values
DS
= 28 V; I
7.4 Single carrier W-CDMA
Dq
20
= 450 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
(1)
(2)
(3)
(4)
(5)
40
P
All information provided in this document is subject to legal disclaimers.
L
001aan561
(W)
BLF6G27L-40P; BLF6G27LS-40P
60
Rev. 1 — 4 July 2011
Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
D
50
40
30
20
10
0
0
V
function of output power; typical values
DS
= 28 V; I
10
Dq
= 450 mA.
20
Power LDMOS transistor
30
© NXP B.V. 2011. All rights reserved.
40
001aan562
(1)
(2)
(3)
(4)
(5)
P
L
(W)
50
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