BLF7G27L-150P NXP Semiconductors, BLF7G27L-150P Datasheet
BLF7G27L-150P
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BLF7G27L-150P Summary of contents
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... BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 Single carrier W-CDMA 2500 to 2700 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G27L-150P (SOT539A BLF7G27LS-150P (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G27L-150P BLF7G27LS-150P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... η D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P Thermal characteristics thermal resistance from junction to case Characteristics C unless otherwise specified ...
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... 2500 MHz ( 2600 MHz ( 2700 MHz Fig 1. Single carrier IS-95 power gain as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam987 60 80 100 P (W) L Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 ...
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... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam989 ACPR (dBc 100 P (W) L Fig 4. 001aam991 P 60 ...
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... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam993 (3) (2) (1) 120 160 200 P (W) L Fig 8. All information provided in this document is subject to legal disclaimers. ...
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... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 9. Single carrier W-CDMA power gain as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam995 η D (%) 80 120 P ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 10 ...
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... 2500 MHz ( 2600 MHz ( 2700 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam997 ACPR 10M (dBc) −10 −20 −30 −40 −50 −60 − ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 15. Package outline SOT539A BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 16. Package outline SOT539B BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P scale ...
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... LDMOS LDMOST N-CDMA PAR RF VSWR W-CDMA 10. Revision history Table 9. Revision history Document ID BLF7G27L-150P_7G27LS-150P v.1 BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 12 November 2010 Document identifier: BLF7G27L-150P_7G27LS-150P ...