BLF879P NXP Semiconductors, BLF879P Datasheet

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications

BLF879P

Manufacturer Part Number
BLF879P
Description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
RF performance at V
[1]
[2]
Mode of operation
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
BLF879P
UHF power LDMOS transistor
Rev. 1 — 23 August 2011
Excellent ruggedness
Optimum thermal behavior and reliability, R
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
Application information
DS
f
(MHz)
f
858
858
1
= 42 V unless otherwise specified.
= 860; f
2
= 860.1
P
(W)
200
95
95
L(AV)
th(j-c)
P
(W)
-
-
-
L(M)
= 0.15 K/W
G
(dB) (%) (dBc) (dBc)
21
21
20
p
47
33
32
D
IMD3
33
-
-
Product data sheet
IMD
-
31
32
[1]
shldr
[1]
PAR
(dB)
-
8.2
8.0
[2]
[2]

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BLF879P Summary of contents

Page 1

... BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. RF performance at V Mode of operation ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLF879P (SOT539A [1] Connected to flange. 3. Ordering information Table 3. Type number BLF879P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol Parameter ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 BLF879P UHF power LDMOS transistor Conditions Min Typ Max Unit [ 2.4 mA 104 - ...

Page 4

... PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9 0.01 % probability on CCDF. Fig 1. 6.1 Ruggedness in class-AB operation The BLF879P is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 860 MHz at rated power. BLF879P Product data sheet RF characteristics … ...

Page 5

... P = 1.3 A; measured common source broadband test circuit as described in Section 8. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values BLF879P aaa-000341 50 η D (%) 800 900 f (MHz) © NXP B.V. 2011. All rights reserved ...

Page 6

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 BLF879P UHF power LDMOS transistor drain drain 2 001aan207 = 42 V and (DVB-T). DS ...

Page 7

... BLF879P electromigration (I DS(DC) All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 BLF879P UHF power LDMOS transistor 001aam586 (1) (2) (3) (4) (5) ( ...

Page 8

... F/m; height = 0.762 mm; Cu (top/bottom metallization); r All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 BLF879P UHF power LDMOS transistor Remarks UT-090C-25 (EZ 90-25) [1] [1] [2] [2] [2] [3] [2] Kemet C1210X475K5RAC-TU or capacitor of same quality. ...

Page 9

G1(test C36 R3 C34 L32 L31 50 Ω C33 C32 L33 B2 C31 R4 C35 C37 G2(test) See Table 9 for a list of components. Fig 6. Class-AB common source broadband amplifier; V C19 ...

Page 10

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 UHF power LDMOS transistor 49 D1(test) + C23 - C21 C11 C15 C10 C13 C4 C6 C14 C8 C12 C16 C22 - C24 + +V D2(test) 24 36.8 mm aaa-000343 BLF879P L4 001aam588 50 Ω © NXP B.V. 2011. All rights reserved ...

Page 11

... 3.48 3.30 2.26 41.28 10.29 35.56 2.97 3.05 2.01 41.02 10.03 0.137 0.130 0.089 1.625 0.405 1.400 0.117 0.120 0.079 1.615 0.395 EUROPEAN PROJECTION BLF879P SOT539A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 00-03-03 10-02-02 © NXP B.V. 2011. All rights reserved ...

Page 12

... OFDM PAR RF SMD UHF VSWR 12. Revision history Table 11. Revision history Document ID BLF879P v.1 BLF879P Product data sheet Abbreviations Description Complementary Cumulative Distribution Function Digital Video Broadcast - Terrestrial Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Peak-to-Average power Ratio ...

Page 13

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 BLF879P UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...

Page 14

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 August 2011 BLF879P UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF879P All rights reserved. Date of release: 23 August 2011 Document identifier: BLF879P ...

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