A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications

BLF884P

Manufacturer Part NumberBLF884P
DescriptionA 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
ManufacturerNXP Semiconductors
BLF884P datasheet
 


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BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011
1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
RF performance at V
Mode of operation
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM)
[1]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, R
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Application information
= 50 V unless otherwise specified.
DS
f
(MHz)
f
= 860; f
= 860.1
1
2
858
858
Product data sheet
P
P
G
IMD3
L(AV)
L(M)
p
D
(W)
(W)
(dB) (%) (dBc) (dBc)
32
150
-
21
46
70
-
21
33
-
70
-
20
32
-
= 0.22 K/W
th(j-c)
IMD
PAR
shldr
(dB)
-
-
31
[1]
[2]
8.2
32
[1]
[2]
8.0

BLF884P Summary of contents

  • Page 1

    ... BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. RF performance at V ...

  • Page 2

    ... LDMOST ceramic package; 4 leads Limiting values Parameter drain-source voltage gate-source voltage storage temperature junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor Simplified outline Graphic symbol [ ...

  • Page 3

    ... All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor Conditions = 80  case L(AV) Conditions Min Typ Max Unit ...

  • Page 4

    ... PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9 0.01 % probability on CCDF. Fig 1. 6.1 Ruggedness in class-AB operation The BLF884P and BLF884PS are capable of withstanding a load mismatch corresponding to VSWR of  through all phases under the following conditions 860 MHz at rated power. BLF884P_BLF884PS ...

  • Page 5

    ... IMD shldr p (dBc) -20 -30 shldr -40 -50 700 800 900 f (MHz) = 0.65 A; measured Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor 9.5 PAR (dB) 8.5 PAR 7.5 η D 6.5 5.5 400 500 600 700 0.65 A ...

  • Page 6

    ... All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor drain drain 2 001aan207 = 50 V and (DVB-T). DS ...

  • Page 7

    ... F/m; height = 0.762 mm; Cu (top/bottom metallization); r All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor Remarks UT-090C-25 (EZ 90-25) [1] [1] [1] [2] [1] Kemet C1210X475K5RAC-TU or capacitor of same quality. ...

  • Page 8

    C36 R3 C34 L32 L31 50 Ω C33 L33 B2 C31 R4 C35 C37 See Table 9 for a list of components. Fig 5. Class-AB common source broadband amplifier C19 C17 R1 ...

  • Page 9

    ... C17 R7 C1 C31 C30 C18 +V G2 6.3 mm All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor C21 + C23 - C19 C21 C15 C11 C10 C13 C4 C14 C12 C16 ...

  • Page 10

    ... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor (2) ...

  • Page 11

    ... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor ...

  • Page 12

    ... Table Table 1. on page 1: Has been updated Table Table 7. on page 3: Has been updated Removed section “Reliability” Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor Change notice Supersedes - BLF884P_BLF884PS v © ...

  • Page 13

    ... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...

  • Page 14

    ... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 16 December 2011 BLF884P; BLF884PS UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...

  • Page 15

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF884P_BLF884PS All rights reserved. Date of release: 16 December 2011 ...