BLF884P NXP Semiconductors, BLF884P Datasheet - Page 11

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications

BLF884P

Manufacturer Part Number
BLF884P
Description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
Fig 8.
BLF884P_BLF884PS
Product data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
Package outline SOT1121B
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 2 — 16 December 2011
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
w
0.505
0.495
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
BLF884P; BLF884PS
w
2
20.70
20.45
0.815
0.805
F
U
1
D
9.91
9.65
0.39
0.38
U
2
UHF power LDMOS transistor
0.51
0.02
w
European
projection
2
E
0.25
0.01
w
1
3
Q
© NXP B.V. 2011. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
11 of 15

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