BLF884P NXP Semiconductors, BLF884P Datasheet - Page 12

• Manufacturer Part Number: BLF884P
• Description: A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Handling information
11. Abbreviations
12. Revision history
Table 11.
BLF884P_BLF884PS
Product data sheet
CAUTION
Document ID
BLF884P_BLF884PS v.2
Modifications:
BLF884P_BLF884PS v.1
Revision history
Table 10.
Acronym
CCDF
DVB
DVB-T
LDMOS
LDMOST
OFDM
PAR
RF
SMD
UHF
VSWR
Release date
20111216
20111013
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
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•
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Table Table 1. on page
Table Table 7. on page
Removed section “Reliability”
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 16 December 2011
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Ultra High Frequency
Voltage Standing-Wave Ratio
1: Has been updated
3: Has been updated
BLF884P; BLF884PS
Change notice
-
-
UHF power LDMOS transistor
Supersedes
BLF884P_BLF884PS v.1
-
© NXP B.V. 2011. All rights reserved.
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