BLF884P NXP Semiconductors, BLF884P Datasheet - Page 4

• Manufacturer Part Number: BLF884P
• Description: A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF884P_BLF884PS
Product data sheet
6.1 Ruggedness in class-AB operation
Table 7.
RF characteristics in NXP production narrowband test circuit; T
specified.
[1]
[2]
[3]
The BLF884P and BLF884PS are capable of withstanding a load mismatch corresponding
to VSWR of  40 : 1 through all phases under the following conditions: V
f = 860 MHz at rated power.
Symbol
DVB-T (8k OFDM), class-AB
V
I
P
G

IMD
PAR
Dq
Fig 1.
D
DS
L(AV)
p
I
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
shldr
dq
for total device
V
Output capacitance as a function of drain-source voltage; typical values per
section
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
GS
RF characteristics
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
Rev. 2 — 16 December 2011
oss
200
150
100
50
0
0
…continued
20
BLF884P; BLF884PS
Conditions
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
40
V
DS
001aao028
case
(V)
UHF power LDMOS transistor
= 25
60
[1]
[2]
[3]

C unless otherwise
Min Typ Max Unit
-
-
70
20
30
-
-
© NXP B.V. 2011. All rights reserved.
-
21
33
50
0.65 -
31 27
8.2
DS
= 50 V;
-
-
-
-
-
4 of 15
V
A
W
dB
%
dBc
dB