BLF884P NXP Semiconductors, BLF884P Datasheet - Page 6

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications

BLF884P

Manufacturer Part Number
BLF884P
Description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF884P_BLF884PS
Product data sheet
7.2 Impedance information
Table 8.
Simulated Z
f
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
Fig 4.
Definition of transistor impedance
Typical push-pull impedance
i
and Z
All information provided in this document is subject to legal disclaimers.
L
device impedance; impedance info at V
Rev. 2 — 16 December 2011
Z
0.984  j3.485
1.009  j2.805
1.038  j2.185
1.071  j1.614
1.107  j1.080
1.147  j0.574
1.193  j0.092
1.243 + j0.373
1.300 + j0.826
1.364 + j1.270
1.436 + j1.708
1.517 + j2.144
1.609 + j2.581
1.714 + j3.022
1.834 + j3.469
1.971 + j3.925
2.129 + j4.394
2.313 + j4.879
2.528 + j5.382
2.781 + j5.907
3.081 + j6.458
3.441 + j7.038
3.875 + j7.648
4.404 + j8.291
5.057 + j8.964
5.870 + j9.659
6.892 + j10.358
8.186 + j11.019
9.829 + j11.566
i
gate 1
Z
gate 2
i
BLF884P; BLF884PS
drain 1
drain 2
001aan207
Z
L
DS
= 50 V and P
UHF power LDMOS transistor
Z
8.315 + j1.246
8.236 + j1.328
8.153 + j1.406
8.066 + j1.479
7.975 + j1.547
7.880 + j1.610
7.782 + j1.667
7.682 + j1.720
7.579 + j1.767
7.474 + j1.809
7.367 + j1.846
7.258 + j1.877
7.149 + j1.903
7.038 + j1.925
6.927 + j1.941
6.815 + j1.952
6.703 + j1.958
6.591 + j1.960
6.480 + j1.956
6.368 + j1.949
6.258 + j1.937
6.148 + j1.921
6.040 + j1.901
5.932 + j1.877
5.825 + j1.849
5.720 + j1.818
5.616 + j1.783
5.514 + j1.745
5.413 + j1.704
L
L(AV)
© NXP B.V. 2011. All rights reserved.
= 70 W (DVB-T).
6 of 15

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