BLF888B NXP Semiconductors, BLF888B Datasheet
BLF888B
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BLF888B Summary of contents
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... BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. RF performance at V ...
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... LDMOST ceramic package; 4 leads Limiting values Parameter drain-source voltage gate-source voltage storage temperature junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor Simplified outline Graphic symbol [1] ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor Conditions = 80 125 W case L(AV) Conditions Min Typ Max Unit ...
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... MHz. GS Output capacitance as a function of drain-source voltage; typical values per section All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor unless otherwise case Conditions Min Typ Max Unit ...
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... Product data sheet 001aao018 60 η D (%) 300 400 500 P (W) L(AV) Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor (dB IMD3 100 200 300 1.3 A ...
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... IMD shldr (dBc) -20 -30 -40 -50 700 800 900 f (MHz) = 1.3 A; measured Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor 12 PAR (dB) 10 PAR 8 η 100 200 1.3 A ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor drain drain 2 001aan207 = 50 V and P = 120 W (DVB-T). DS ...
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... BLF888B; BLF888BS electromigration (I All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor (1) (2) (3) (4) (5) ( ...
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... F/m; height = 0.762 mm; Cu (top/bottom metallization); r All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor Remarks UT-090C-25 (EZ 90-25) [1] [1] [2] [2] [2] [3] [2] Kemet C1210X475K5RAC-TU or capacitor of same quality. ...
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G1(test C36 R3 C34 L32 L31 50 Ω C32 C33 L33 B2 C31 R4 C35 C37 G2(test) See Table 9 for a list of components. Fig 10. Class-AB common source broadband amplifier; V C19 ...
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... C17 R7 C19 C1 C3 C32 C30 C31 C20 C18 +V G2(test) 6.3 mm All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor 49 D1(test) + C23 - C21 C11 C15 C10 C13 ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor ...
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... PAR RF SMD TTF UHF VSWR 12. Revision history Table 11. Revision history Document ID BLF888B_BLF888BS v.1 BLF888B_BLF888BS Product data sheet Abbreviations Description Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 October 2011 BLF888B; BLF888BS UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF888B_BLF888BS All rights reserved. Date of release: 17 October 2011 ...