BLS2933-100 NXP Semiconductors, BLS2933-100 Datasheet
BLS2933-100
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BLS2933-100 Summary of contents
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... BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 1. Product profile 1.1 General description 100 W LDMOS power transistor (at a supply voltage for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 200 Mode of operation class AB CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter transient thermal impedance from junction to heatsink Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor Simplified outline Symbol 1 3 [1] 2 Min Max - ...
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... Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor Conditions Min 2 ...
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... Philips Semiconductors Table 8. f GHz 2.9 3.0 3.1 3.2 3.3 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS2933-100 is capable of withstanding a load mismatch corresponding to VSWR > through all phases under the following conditions mA BLS2933-100_1 Product data sheet Typical impedance Z S 3.3 j5.6 3.7 j5.3 5.9 j5.8 6.8 j3.4 6.6 j2.7 gate 100 W pulsed 200 s ...
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... Fig 3. Power gain as a function of load power; typical 001aaf071 (W) 120 160 P ( 2.9 MHz. ( 3.0 MHz. ( 3.1 MHz. ( 3.2 MHz. ( 3.3 MHz. = 200 Fig 5. Load power as a function of input power; Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor mA 200 s ...
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... Fig 7. Power gain as a function of frequency; typical (%) 2.8 3.0 3.2 = 100 W. L Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor 2.8 3.0 3.2 = 100 300 500 mA 100 s, 200 s and ...
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... Fig 10. Maximum allowable dissipated power as function of pulse duration and duty cycle for reaching 200 C junction temperature BLS2933-100_1 Product data sheet 4 10 (1) (2) (3) ( Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor 001aaf082 (s) p 001aaf083 (s) p © ...
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... Philips Semiconductors 8. Test information C2 +Vgs R1 C11 C1 BLS2933-100 in The components are situated on one side of the copper-clad Duroid 6006 Printed-Circuit Board (PCB). Both the input and output PCB are with See Table 9 for list of components Fig 11. Component layout for test circuit Table 9 ...
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... 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9.25 0.89 18.92 4.32 0.786 0.374 0.375 0.045 0.785 0.210 0.774 0.366 0.364 0.035 0.745 0.170 REFERENCES JEDEC JEITA Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3.12 1.45 33.91 9.65 0.133 0.067 1.345 ...
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... Revision history Table 10. Revision history Document ID Release date BLS2933-100_1 20060801 BLS2933-100_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 1 August 2006 BLS2933-100 Microwave power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. All rights reserved. Date of release: 1 August 2006 Document identifier: BLS2933-100_1 ...