STPS20M80C STMicroelectronics, STPS20M80C Datasheet - Page 3

• Manufacturer Part Number: STPS20M80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS20M80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
9
8
7
6
5
4
3
2
1
0
0.01
0.1
V
0
I
P
1
0.01
R
F
F(AV)
(1)
(2)
P
P
ARM
1
(W)
ARM
(1µs)
(t p )
2
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.51 x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
3
Parameter
4
δ = 0.05
5
1
F(AV)
δ = 0.1
6
+ 0.0115 x I
δ = t / T
7
δ = 0.2
10
p
8
T
T
T
T
T
T
T
T
T
t
j
j
j
j
j
j
j
j
p
9
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
δ = 0.5
100
10
F
Doc ID 018724 Rev 1
Test conditions
2
(RMS)
I
F(AV)
11
t (µs)
δ = 1
p
(A)
1000
12
V
I
I
I
F
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 5 A
= 10 A
= 20 A
= V
1
0
12
11
10
25
9
8
7
6
5
4
3
2
1
0
P
0
I
ARM
P
RRM
F(AV)
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
50
-
-
-
-
-
-
-
-
TO-220AB / I PAK / D PAK
75
75
T
0.555
0.490
0.670
0.575
0.810
0.670
Typ.
amb
6.2
TO-220FPAB
7
R th(j-a) = R th(j-c)
(°C)
2
100
100
2
0.610
0.530
0.740
0.625
0.905
0.740
Max.
125
30
20
125
150
Unit
mA
µA
T (°C)
V
j
175
3/11
150