STPS20SM60S STMicroelectronics, STPS20SM60S Datasheet - Page 2

• Manufacturer Part Number: STPS20SM60S
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/9
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to
2. See
3.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.430 x I
Symbol
Symbol
Symbol
P
V
V
I
R
V
F(RMS)
I
ARM
ARM
ASM
V
I
F(AV)
I
T
FSM
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
th(j-c)
R
RRM
F
T
dPtot
stg
dTj
(1)
(2)
j
(1)
(2)
(2)
Figure 12
<
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum single-pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Reverse leakage
current
Forward voltage drop
Rth(j-a)
1
p
p
F(AV)
Absolute ratings (limiting values with terminals 1 and 3 short circuited at
T
Thermal resistance
Static electrical characteristics (terminals 1 and 3 short circuited)
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
amb
Parameter
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0075 x I
= 25 °C, unless otherwise specified)
F
Doc ID 022058 Rev 1
2
(RMS)
T
T
T
T
T
T
j
j
j
j
j
j
t
t
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
p
p
Parameter
Parameter
< 1 µs, T
< 1 µs, T
Test conditions
j
j
V
I
I
< 150 °C, I
< 150 °C, I
F
F
R
= 10 A
= 20 A
(3)
t
T
T
p
= V
c
j
= 10 ms sine-wave
= 25 °C, t
= 130 °C Per package
RRM
AR
AR
Figure 4
< 69 A
< 69 A
p
Min.
= 1 µs
-
-
-
-
-
-
and 5. More details regarding the
0.495
0.410
0.570
0.510
Typ.
15
20
-65 to +175
Value
1.3
STPS20SM60S
18400
Value
0.535
0.460
0.630
0.580
Max.
400
150
60
60
20
80
80
85
50
°C/W
Unit
Unit
mA
µA
Unit
V
°C
°C
W
V
A
A
A
V
V