STPS20M60 STMicroelectronics, STPS20M60 Datasheet - Page 2

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STPS20M60

Manufacturer Part Number
STPS20M60
Description
Power Schottky rectifier
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
2/7
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to
2. See
3.
Table 3.
Symbol
Symbol
P
V
V
I
R
V
F(RMS)
I
ARM
ARM
ASM
I
F(AV)
T
FSM
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
th(j-c)
RRM
T
dPtot
stg
dTj
j
(1)
(2)
(2)
Figure 11
<
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum repetitive peak
avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Rth(j-a)
1
Absolute ratings (limiting values, at T
specified)
Thermal parameters
condition to avoid thermal runaway for a diode on its own heatsink
Doc ID 022037 Rev 1
Parameter
t
t
Parameter
p
p
< 1 µs, T
< 1 µs, T
j
j
< 150 °C, I
< 150 °C, I
(3)
T
t
T
p
c
j
= 10 ms sine-wave
= 25 °C, t
= 135 °C
amb
Figure 4
AR
AR
= 25 °C unless otherwise
< 99 A
< 99 A
p
and 5. More details regarding the
= 1 µs
-65 to +175
Value
1.0
26400
Value
400
150
60
60
20
80
80
STPS20M60
°C/W
Unit
Unit
°C
°C
W
V
A
A
A
V
V

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