STPS20SM60C STMicroelectronics, STPS20SM60C Datasheet - Page 3

• Manufacturer Part Number: STPS20SM60C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

STPS20SM60C
Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
9
8
7
6
5
4
3
2
1
0
0.01
0.1
V
0
I
1
0.01
R
P
F
(1)
F(AV)
(2)
P
P
ARM
1
ARM
(W)
(1µs)
(t p )
2
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.455 x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
3
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
δ = 0.05
4
Parameter
5
δ = 0.1
1
6
δ = t / T
F(AV)
p
7
δ = 0.2
+ 0.0145 x I
T
8
10
t
p
9
T
T
T
T
T
T
δ = 0.5
j
j
j
j
j
j
10
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
100
11
F
Doc ID 022015 Rev 1
Test conditions
2
I
(RMS)
F(AV)
δ = 1
12
t (µs)
p
(A)
1000
13
V
I
I
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 5 A
= 10 A
= V
1
0
12
10
25
8
6
4
2
0
P
0
I
ARM
P
RRM
F(AV)
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
TO-220AB/I PAK/D PAK
-
-
-
-
-
-
50
75
R th(j-a) = R th(j-c)
T
TO-220FPAB
amb
2
0.505
0.420
0.580
0.525
Typ.
(°C)
75
10
5
2
100
100
0.545
0.475
0.645
0.600
Max.
Characteristics
40
25
125
125
Unit
mA
µA
T (°C)
V
j
150
3/11
150