STPS20SM60C STMicroelectronics, STPS20SM60C Datasheet - Page 4

• Manufacturer Part Number: STPS20SM60C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
4/11
Figure 6.
Figure 8.
Figure 10. Reverse leakage current versus
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
160
140
120
100
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
80
60
40
20
1.E-04
1.E-03
0
Z
I (A)
M
Single pulse
th(j-c)
I
M
0
I (mA)
R
/R
δ = 0.5
th(j-c)
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration
reverse voltage applied
(typical values, per diode)
10
1.E-03
TO-220AB/I PAK/D PAK
1.E-02
20
2
T = 150 °C
T = 125 °C
T = 100 °C
1.E-02
j
j
j
T = 25 °C
T = 75 °C
T = 50 °C
j
j
j
30
2
1.E-01
TO-220AB/I PAK/D PAK
40
1.E-01
2
T = 125 °C
T = 25 °C
T = 75 °C
c
50
c
c
Doc ID 022015 Rev 1
2
V (V)
t(s)
t (s)
p
1.E+00
1.E+00
R
60
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
90
80
70
60
50
40
30
20
10
100
1.E-03
1.E-03
0
Z
I (A)
1
M
Single pulse
th(j-c)
C(pF)
I
M
/R
δ = 0.5
th(j-c)
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration
reverse voltage applied
(typical values, per diode)
1.E-02
1.E-02
TO-220FPAB
1.E-01
10
1.E-01
1.E+00
STPS20SM60C
V
osc
TO-220FPAB
F = 1 MHz
T = 25 °C
T = 125 °C
= 30 mV
j
T = 75 °C
c
T = 25 °C
c
c
V (V)
t (s)
p
1.E+01
R
1.E+00
RMS
100