STPS20L45C STMicroelectronics, STPS20L45C Datasheet - Page 2

• Manufacturer Part Number: STPS20L45C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS20L45C

• Insulated Package: TO-220FPAB

Characteristics
1
2/9
Characteristics
Table 1.
1.
Table 2.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 3.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.28 x I
Symbol
Symbol
Symbol
I
Tj(diode 1) = P(diode1) x R
V
F(RMS)
R
R
I
P
dV/dt
I
I
I
V
F(AV)
T
I
RRM
RSM
FSM
RRM
ARM
th(j-c)
th(j-c)
R
T
dPtot
---------------
F
stg
dTj
(1)
(1)
j
<
------------------------- -
Rth j a
Repetitive peak reverse voltage
RMS forward voltage
Average forward
current
Surge non repetitive forward current
Peak repetitive reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Reverse leakage current
Forward voltage drop
Junction to case
Junction to case
F(AV)
(
1
Absolute Ratings (limiting values)
Thermal resistances
Static electrical characteristics (per diode)
–
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.022 I
Parameter
F
2
TO-220AB / D
TO-220FPAB
(RMS)
th(j-c)
(Per diode) + P(diode 2) x R
Parameter
TO-220FPAB
TO-220AB / D
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 25° C
= 125° C
2
PAK
Test Conditions
T
δ = 0.5
T
δ = 0.5
t
t
t
t
(1)
p
p
p
p
2
c
c
PAK
= 2 µs square F = 1 kHz
= 10 ms Sinusoidal
= 100 µs square
= 1 µs T
=135° C
= 115° C
V
I
I
I
I
F
F
F
F
R
= 10 A
= 10 A
= 20 A
= 20 A
= V
j
= 25°C
RRM
Per diode
Per diode
Coupling
Coupling
Per diode
Per device
Per diode
Per device
Total
Total
th(c)
Min.
.
Typ.
0.44
0.62
-65 to + 150
65
Value
10000
4.5
3.5
2.5
2.2
1.3
0.3
Value
4000
180
150
45
30
10
20
10
20
1
2
STPS20L45C
Max.
0.55
0.73
0.72
130
0.2
0.5
°C/W
°C/W
Unit
Unit
V/µs
Unit
°C
mA
mA
W
°C
V
A
A
A
A
A
A
V