STPS3045C STMicroelectronics, STPS3045C Datasheet - Page 4

• Manufacturer Part Number: STPS3045C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS3045C

• Insulated Package: TOP-3I

STPS3045CT/CG/CR/CP/CPI/CW/CFP
Fig. 5-3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
120
100
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10000
4/9
80
60
40
20
1000
1.E-03
1.E-03
0
100
Z
I (A)
M
th(j-c)
Single pulse
C(nF)
1
= 0.5
= 0.2
= 0.1
I
M
/R
th(j-c)
=0.5
t
1.E-02
1.E-02
TO-220FPAB
1.E-01
t(s)
V (V)
t (s)
p
R
10
1.E-01
1.E+00
=tp/T
V
OSC
TO-220FPAB
F=1MHz
T =25°C
=30mV
j
T
T =100°C
T =125°C
T =75°C
C
C
C
RMS
tp
1.E+00
1.E+01
100
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
1000
1.E-01
100
1.E-03
10
1
Z
0.0
I
Single pulse
th(j-c)
FM
= 0.2
= 0.1
= 0.5
0
I (µA)
R
(A)
0.2
/R
5
th(j-c)
TO-220AB, I PAK, D PAK, SOT-93, TOP-3I, TO-247
(typical values)
T =125°C
j
0.4
10
2
1.E-02
0.6
2
15
0.8
T =125°C
T =150°C
T =100°C
T =25°C
T =75°C
T =50°C
V
j
j
j
j
20
t (s)
j
j
(maximum values)
p
FM
V (V)
(maximum values)
R
T =25°C
(V)
T =125°C
j
j
1.0
25
1.E-01
1.2
30
=tp/T
1.4
35
T
1.6
40
tp
1.E+00
1.8
45