STPS20H100C STMicroelectronics, STPS20H100C Datasheet - Page 2
STPS20H100C
Manufacturer Part Number
STPS20H100C
Description
100 V power Schottky rectifier
Manufacturer
STMicroelectronics
Datasheet
1.STPS20H100C.pdf
(11 pages)
Specifications of STPS20H100C
Insulated Package
TO-220FPAB
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Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x R
Symbol
Symbol
I
R
F(RMS)
V
I
P
dV/dt
R
I
I
I
F(AV)
T
RRM
RSM
FSM
th(j-c)
ARM
RRM
th(c)
T
dPtot
stg
dTj
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward
current δ = 0.5
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Junction to case
Rth(j-a)
1
Absolute ratings (limiting values, per diode)
Thermal resistance
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
TO-220AB
D
TO-220FPAB
TO-220AB / D
TO-220FPAB
TO-220AB / D
TO-220FPAB
TO-220AB / D
TO-220FPAB
2
Doc ID 5386 Rev 7
PAK / I
(Per diode) + P(diode 2) x R
Parameter
Parameter
2
PAK
2
2
2
PAK / I
PAK / I
PAK / I
(1)
T
T
t
t
t
t
p
p
p
p
c
c
= 10 ms sinusoidal
= 2 µs square F= 1 kHz
= 100 µs square
= 1 µs T
= 160 °C
= 145 °C
2
2
2
PAK
PAK
PAK
j
= 25 °C
Per diode
Per device
Per diode
Per diode
Total
Total
Coupling
Coupling
th(c)
-65 to + 175
10800
10000
Value
Value
0.15
100
250
175
1.6
0.9
3.2
2.5
30
10
20
1
3
4
°C/W
°C/W
°C/W
Unit
V/µs
Unit
°C
°C
W
V
A
A
A
A
A