STPS20150C STMicroelectronics, STPS20150C Datasheet - Page 4

• Manufacturer Part Number: STPS20150C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
4/10
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
100.0
10.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.1
1.E-03
I (µA)
0
0.0
R
Z
I
FM
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220AB, I PAK and D PAK
(A)
0.2
/R
th(j-c)
25
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
forward current (per diode)
T =125°C
2
j
0.4
(typical values)
T =125°C
j
1.E-02
2
50
0.6
0.8
V
t (s)
T =125°C
T =175°C
T =150°C
T =100°C
T =25°C
p
j
j
j
j
j
FM
T =25°C
75
j
(V)
1.0
1.E-01
100
1.2
δ
=tp/T
1.4
125
T
V (V)
Doc ID 7756 Rev 9
1.6
R
tp
1.E+00
1.8
150
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
70
60
50
40
30
20
10
10
0
1.E-03
0
R
1
C(pF)
Z
th(j-a)
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220FPAB
(°C/W)
5
/R
2
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
reverse voltage applied
(typical values, per diode)
ambient versus copper surface
under tab
1.E-02
10
5
Epoxy printed circuit board, copper thickness = 35 µm
15
10
S(cm²)
1.E-01
t (s)
V (V)
p
20
R
(STPS20150CG only)
20
25
1.E+00
30
50
δ
=tp/T
STPS20150C
T
100
35
F=1MHz
T =25°C
j
tp
1.E+01
40
200