STPS2030C STMicroelectronics, STPS2030C Datasheet

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STPS2030C

Manufacturer Part Number
STPS2030C
Description
Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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MAJOR PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AB, D
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed: 3A
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
Repetitive peak reverse voltage
RMS forward current
Average forward
current
Surge non repetitive forward current
Peak repetitive reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated V
®
RRM
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
2
LOW DROP POWER SCHOTTKY RECTIFIER
PAK and I
2 x 10 A
150°C
0.40 V
30 V
2
Parameter
PAK, this
Tc = 140°C
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
R
, Tj = 25°C)
STPS2030CG
STPS2030CT/CG/CR
K
A1
A2
D
2
PAK
A1
Per diode
Per device
A2
K
STPS2030CR
- 65 to + 150
STPS2030CT
I
10000
Value
2
3000
TO-220AB
180
150
PAK
30
30
10
20
1
2
A1
K
A1
A2
V/µs
Unit
K
°C
°C
W
V
A
A
A
A
A
A2
1/6

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STPS2030C Summary of contents

Page 1

... Tc = 140° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25° 25° TO-220AB 2 D PAK STPS2030CT PAK STPS2030CR Value Per diode 20 Per device 180 1 2 3000 - 150 150 10000 Unit ...

Page 2

... STPS2030CT/CG/CR THERMAL RESISTANCES Symbol R th(j-c) Junction to case TO-220AB - D R th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : 0. 0.012 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. ...

Page 3

... C(nF) 10.0 1.0 0 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4 35µm). R th(j- 0.8 1.0 1.2 0 STPS2030CT/CG/CR /R th(j-c) t (s) p 1.E-02 1.E- (°C/W) S(Cu)(cm² =tp/T tp 1.E+00 F=1MHz V =30mV OSC RMS T =25°C ...

Page 4

... STPS2030CT/CG/CR PACKAGE MECHANICAL DATA I²PAK 4/6 REF DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.70 0.93 0.028 0.037 1.14 1.17 0.044 0.046 1.14 1.17 0.044 0.046 0.45 0.60 0.018 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 ...

Page 5

... G * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 3.70 8.90 REF 5.08 1.30 STPS2030CT/CG/CR DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8 ...

Page 6

... STPS2030CT STPS2030CT STPS2030CG STPS2030CG STPS2030CG-TR STPS2030CG STPS2030CR STPS2030CR EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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