STPS20L25C STMicroelectronics, STPS20L25C Datasheet - Page 2

• Manufacturer Part Number: STPS20L25C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS20L25CT/CG
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test:
To evaluate the maximum conduction losses use the following equation :
P = 0.22 x I
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 3: Normalized avalanche power derating
versus pulse duration.
2/5
5
4
3
2
1
0
0.001
When the diodes 1 and 2 are used simultaneously :
Symbol
0.01
Symbol
0
0.1
R
PF(av)(W)
Tj(diode 1) = P(diode1) x R
R
0.01
1
th (j-c)
V
I
th (c)
P
R
F
P
ARM
1
ARM p
*
*
(1µs)
(t )
2
F(AV)
0.1
Junction to case
* tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
= 0.05
3
Tests conditions
+ 0.013 I
4
= 0.1
1
IF(av) (A)
5
t (µs)
p
F
2
= 0.2
(RMS)
6
10
th(j-c)
7
(Per diode) + P(diode 2) x R
8
= 0.5
Parameter
100
=tp/T
9
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
T
10
= 1
Tests conditions
tp
1000
11
Fig. 2: Average forward current versus ambient
temperature ( = 0.5).
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
12
10
8
6
4
2
0
1
0
V
I
I
I
I
0
F
F
F
F
0
P
IF(av)(A)
R
ARM
P
= 10 A
= 10 A
= 20 A
= 20 A
Coupling
ARM p
= V
Per diode
Total
=tp/T
(25°C)
th(c)
(t )
RRM
25
25
T
tp
50
50
Min.
Rth(j-a)=50°C/W
Tamb(°C)
T (°C)
j
75
75
Typ.
0.30
0.41
Rth(j-a)=Rth(j-c)
125
Value
1.5
0.8
0.1
100
100
Max.
0.46
0.35
0.56
0.48
800
250
125
125
Unit
Unit
C/W
mA
V
A
150
150