STPS20L60C STMicroelectronics, STPS20L60C Datasheet - Page 3

• Manufacturer Part Number: STPS20L60C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
200
180
160
140
120
100
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
5E+2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0.01
80
60
40
20
0.1
1E-3
0
IM(A)
0.01
1
P
0
P
ARM
I
M
IR(mA)
ARM p
5
(1µs)
(t )
=0.5
t
0.1
10 15 20 25 30 35 40 45 50 55 60
1E-2
1
Tc=150°C
Tc=125°C
Tc=100°C
Tc=75°C
Tc=50°C
Tc=25°C
t (µs)
p
t(s)
VR(V)
10
1E-1
100
Tc=100°C
Tc=25°C
Tc=75°C
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
2.0
1.0
0.5
0.2
0.1
1
0
1E-4
Zth(j-c)/Rth(j-c)
C(nF)
0
P
1
P
ARM
= 0.2
= 0.5
= 0.1
ARM p
Single pulse
(25°C)
(t )
25
1E-3
50
T (°C)
STPS20L60CT/CG/CR
1E-2
j
VR(V)
75
10
tp(s)
100
1E-1
=tp/T
125
T
F=1MHz
Tj=25°C
tp
1E+0
100
150
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