STPS20M60C STMicroelectronics, STPS20M60C Datasheet - Page 2

• Manufacturer Part Number: STPS20M60C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/10
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to
2. See
3.
Table 3.
When the two diodes 1 and 2 are used simultaneously:
ΔT
Symbol
Symbol
P
V
V
I
R
V
F(RMS)
I
R
ARM
ARM
ASM
I
j
F(AV)
T
FSM
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
(diode 1) = P(diode 1) x R
th(j-c)
RRM
th(c)
T
dPtot
stg
dTj
j
(1)
(2)
(2)
Figure 12
<
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum single-pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Rth(j-a)
1
Absolute ratings (limiting values, per diode, at T
otherwise specified)
Thermal parameters
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
Doc ID 022057 Rev 1
(Per diode) + P(diode 2) x R
Parameter
t
t
Parameter
p
p
< 1 µs, T
< 1 µs, T
j
j
< 150 °C, I
< 150 °C, I
(3)
T
T
t
T
p
c
c
j
= 10 ms sinusoidal
= 25 °C, t
= 140 °C
= 135 °C
Figure 4
AR
AR
per diode
total
< 51 A
< 51 A
p
and 5. More details regarding the
= 1 µs
th(c)
Per diode
Per device
amb
= 25 °C unless
-65 to +175
Value
0.85
1.5
0.2
13600
Value
300
150
STPS20M60C
60
40
10
20
80
80
°C/W
°C/W
Unit
Unit
°C
°C
W
V
A
A
A
V
V