STTH3002C STMicroelectronics, STTH3002C Datasheet - Page 3

• Manufacturer Part Number: STTH3002C
• Description: High Efficiency Ultrafast Diode
• Manufacturer: STMicroelectronics

Specifications of STTH3002C

• Insulated Voltage: 2500 Vrms

STTH3002C
Table 4.
1. Pulse test: t
2. Pulse test: t
Table 5.
Figure 1.
Symbol
Symbol
V
V
I
I
RM
t
R
t
120
100
FP
F
rr
fr
80
60
40
20
(1)
0
(2)
0.0
I (A)
M
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
Reverse leakage current
Forward voltage drop
P = 10W
p
p
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.69 x I
Dynamic characteristics
Peak current versus duty cycle
(per diode)
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
0.2
0.3
P = 15W
Parameter
Parameter
0.4
P = 30W
F(AV)
0.5
δ
+ 0.01 I
0.6
0.7
F
I
δ
M
2
=tp/T
0.8
(RMS)
T
I
V
I
V
I
V
I
T
0.9
F
F
F
F
j
R
R
FR
tp
T
T
T
T
= 1 A, dI
= 15 A, dI
= 15 A, dI
= 15 A, dI
= 25 °C
j
j
j
j
= 30 V, T
= 160 V, T
= 25 °C
= 125 °C
= 25 °C
= 150 °C
= 1.1 x V
1.0
Test conditions
Test conditions
F
Figure 2.
/dt = 200 A/µs,
F
F
F
j
/dt = 200 A/µs,
/dt = 200 A/µs
/dt = 200 A/µs,
= 25 °C
Fmax
j
100
= 125 °C
90
80
70
60
50
40
30
20
10
0
0.0
I
FM
V
I
I
I
I
, T
F
F
F
F
R
(A)
= 15 A
= 30 A
= 15 A
= 30 A
j
= V
= 25 °C
0.2
RRM
Forward voltage drop versus
forward current (typical values, per
diode)
0.4
0.6
Min.
0.8
T =150°C
j
Min.
V
FM
1.0
0.75
Typ
(V)
10
Typ
2.5
17
1.2
6
Characteristics
T =25°C
j
Max.
1.05
1.18
0.84
0.99
1.4
125
Max.
20
110
7.8
22
1.6
Unit
Unit
µA
ns
ns
V
A
V
3/11
1.8