STM8AF5168 STMicroelectronics, STM8AF5168 Datasheet - Page 70

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STM8AF5168

Manufacturer Part Number
STM8AF5168
Description
-
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8AF5168

Max Fcpu
24 MHz
Program Memory
32 to 128 Kbytes Flash program; data retention 20 years at 55 °C
Data Memory
up to 2 Kbytes true data EEPROM; endurance 300 kcycles
Ram
2 Kbytes to 6 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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Electrical characteristics
10.3.5
70/106
Memory characteristics
Flash program memory/data EEPROM memory
General conditions: T
Table 36.
1. Guaranteed by characterization, not tested in production.
Table 37.
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
Symbol
Symbol
t
V
V
t
erase
prog
N
write/erase operation addresses a single byte.
T
t
DD
DD
RET
WE
WE
Operating voltage
(all modes, execution/write/erase)
Operating voltage (code execution)
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Temperature for writing and erasing
Flash program memory endurance
(erase/write cycles)
Data retention time
Flash program memory/data EEPROM memory
Flash program memory
A
Parameter
= -40 °C to 150 °C.
Parameter
(1)
Doc ID 14395 Rev 8
f
f
f
f
CPU
CPU
CPU
CPU
Conditions
is 16 to 24 MHz
is 16 to 24 MHz
with 1 ws
is 0 to 16 MHz
with 0 ws
with 1 ws
is 0 to 16 MHz
with 0 ws
Condition
T
T
T
A
A
A
= 25 °C
= 25 °C
= 55 °C
STM8AF52/62xx, STM8AF51/61xx
Min
1000
Min
-40
3.0
2.6
40
20
(1)
Typ
6
3
3
Max
150
Max
5.5
5.5
6.6
3.3
3.3
cycles
years
Unit
°C
Unit
ms
ms
V

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