STM8AF5269 STMicroelectronics, STM8AF5269 Datasheet - Page 61

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STM8AF5269

Manufacturer Part Number
STM8AF5269
Description
STM8AF52 CAN Line
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8AF5269

Max Fcpu
24 MHz
Program Memory
32 to 128 Kbytes Flash program; data retention 20 years at 55 °C
Data Memory
up to 2 Kbytes true data EEPROM; endurance 300 kcycles
Ram
2 Kbytes to 6 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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STM8AF52/62xx, STM8AF51/61xx
10.3.1
10.3.2
Table 26.
1. Guaranteed by design, not tested in production.
2. If V
VCAP external capacitor
Stabilization for the main regulator is achieved connecting an external capacitor C
V
to less than 15 nH.
Figure 11. External capacitor C
1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance.
Supply current characteristics
The current consumption is measured as described in
page
If not explicitly stated, general conditions of temperature and voltage apply.
CAP
V
Symbol
kept. The EEPROM programming sequence must not be initiated.
HYS(BOR)
t
t
TEMP
V
V
VDD
58.
pin. C
DD
IT+
IT-
is below 3 V, the code execution is guaranteed above the V
EXT
Operating conditions at power-up/power-down
V
V
Reset release delay
Reset generation delay
Power-on reset
threshold
Brown-out reset
threshold
Brown-out reset
hysteresis
DD
DD
is specified in
rise time rate
fall time rate
Parameter
(2)
ESR
Table
Doc ID 14395 Rev 8
EXT
25. Care should be taken to limit the series inductance
Conditions
V
V
DD
DD
Rleak
C
falling
rising
Figure 8 on page 57
2.65
2.58
Min
2
2
IT-
(1)
(1)
and V
IT+
Electrical characteristics
thresholds. RAM content is
70
2.73
Typ
2.8
3
3
ESL
(1)
and
Max
2.95
2.88
Figure 9 on
EXT
to the
61/106
Unit
µs/V
mV
ms
µs
V

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